Ningxia Chuangshengs annual production of 600000 pieces of 8-inch silicon carbide substrate supporting crystal project starts construction

On the morning of July 20th, with warm applause and the roar of machines, Ningxia Chuangsheng produced 600000 8-inch silicon carbide substrate wafers annually. It is reported that silicon carbide, as the core material of the third-generation semiconductor, is the cornerstone supporting the development of strategic emerging industries such as new energy vehicles, photovoltaic energy storage, and 5G communication. Jingsheng Electromechanical continues to innovate, achieving continuous breakthroughs from 6 inches, 8 inches to 12 inches, and comprehensively laying out a series of equipment for crystal growth, forming and polishing, detection, cleaning, epitaxy, ion implantation, etc. for SiC chips.

In his speech, Cao Jianwei, Chairman of Zhejiang Jingsheng Electromechanical Co., Ltd., stated that in recent years, with the strong assistance of the district and city party committees, governments, and various departments of the Economic Development Zone, as well as the strong support of customers, suppliers, and industry experts, Jingsheng Electromechanical has implemented 8 projects including sapphire, quartz crucible, and diamond wire since its landing in the Economic Development Zone in 2020, and has written a development story of "from single point navigation to cluster chain formation". After the completion of this project, it will become a leading and technologically advanced 8-inch silicon carbide crystal base in China. Next, the company will strive to build a zero carbon factory, smart factory, and safety engineering model with 100% green manufacturing, 100% digital empowerment, and 100% safe delivery, helping China's silicon carbide industry move from being stuck in China to the world! The atmosphere of hot project commencement is becoming increasingly high, which is not only a practical measure for Yinchuan Economic Development Zone to solidly carry out the "Stable Growth and Promote Development Year" action and accelerate the construction of the "Three Capitals and Five Bases" with practical work, but also a vivid practice of focusing on key breakthroughs and striving for development goals in the second half of the year.

After the completion of the Chuangsheng annual production of 600000 8-inch silicon carbide substrate wafers supporting crystal project, a silicon carbide full industry chain of 'substrate epitaxial device application' will be formed, promoting the Economic Development Zone to take a key step from a 'photovoltaic material agglomeration area' to a 'semiconductor full industry chain highland', "said He Mei, Deputy Secretary of the Party Working Committee and Director of the Management Committee of Yinchuan Economic Development Zone. The crystal project has started construction.

In recent years, Yinchuan City has vigorously implemented the "Five Eight" Strong Capital Strategy, focusing on the construction of "Three Capitals and Five Bases", accelerating the creation of "China's New Silicon Capital", promoting the construction of a new energy system, ensuring the development space of industrial clusters, and coordinating the layout of the upstream and downstream of the industrial chain. It has successfully attracted a number of key projects with large investment scale, high technological content, good market prospects, and strong driving effects, promoting the upgrading of industrial foundation, modernization of industrial chain, and clustering of industrial development, and gathering strong forces for Yinchuan City to build "China's New Silicon Capital".